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1. product profile 1.1 general description npn general-purpose double transistor s in a small sot143b surface-mounted device (smd) plastic package. 1.2 features ? low current (max. 100 ma) ? low voltage (max. 30 v) ? matched pairs 1.3 applications ? applications with working poin t independent of temperature ? current mirrors 2. pinning information bcv61 npn general-purpose double transistors rev. 04 ? 18 december 2009 product data sheet table 1. product overview type number package pnp complement nxp jeita bcv61 sot143b - bcv62 bcv61a bcv62a bcv61b bcv62b BCV61C bcv62c table 2. pinning pin description simplified outline graphic symbol 1 collector tr2; base tr1 and tr2 2 collector tr1 3emittertr1 4emittertr2 2 1 3 4 006aaa84 2 12 4 tr2 tr1 3
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 2 of 13 nxp semiconductors bcv61 npn general-purpose double transistors 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb). table 3. ordering information type number package name description version bcv61 - plastic surface-mounted package; 4 leads sot143b bcv61a bcv61b BCV61C table 4. marking codes type number marking code [1] bcv61 1m* bcv61a 1j* bcv61b 1k* BCV61C 1l* table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor v cbo collector-base voltage open emitter - 30 v v ceo collector-emitter voltage open base - 30 v v ebs emitter-base voltage v ce =0v - 6 v i c collector current - 100 ma i cm peak collector current - 200 ma i bm peak base current - 200 ma per device p tot total power dissipation t amb 25 c [1] -250mw t j junction temperature - 150 c t amb ambient temperature ? 65 +150 c t stg storage temperature ? 65 +150 c
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 3 of 13 nxp semiconductors bcv61 npn general-purpose double transistors 6. thermal characteristics [1] device mounted on an fr4 pcb. 7. characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 500 k/w table 7. characteristics t j =25 c unless otherwise specified. symbol parameter conditions min typ max unit transistor tr1 i cbo collector-base cut-off current v cb =30v; i e =0a --15na v cb =30v; i e =0a; t j = 150 c --5 a i ebo emitter-base cut-off current v eb =5v; i c =0a - - 100 na h fe dc current gain v ce =5v; i c = 100 a 100 - - v ce =5v; i c =2ma 110 - 800 v cesat collector-emitter saturation voltage i c =10ma; i b =0.5ma - 90 250 mv i c = 100 ma; i b =5ma - 200 600 mv v besat base-emitter saturation voltage i c =10ma; i b =0.5ma [1] - 700 - mv i c = 100 ma; i b =5ma [1] - 900 - mv v be base-emitter voltage i c =2ma; v ce =5v [2] 580 660 700 mv i c =10ma; v ce =5v [2] - - 770 mv f t transition frequency v ce =5v; i c =10ma; f = 100 mhz 100 - - mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz -2.5-pf nf noise figure v ce =5v; i c = 200 a; r s =2k ; f=1khz; b=200hz --10db
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 4 of 13 nxp semiconductors bcv61 npn general-purpose double transistors [1] v besat decreases by about 1.7 mv/k with increasing temperature. [2] v be decreases by about 2 mv/k with increasing temperature. [3] device, without emitter resistors, mounted on an fr4 pcb. transistor tr2 v ebs emitter-base voltage v cb =0v; i e = ? 250 ma -- ? 1.8 v v cb =0v; i e = ? 10 a ? 400--mv h fe dc current gain v ce =5v; i c =2ma bcv61 110 - 800 bcv61a 110 - 220 bcv61b 200 - 450 BCV61C 420 - 800 transistors tr1 and tr2 i c1 /i e2 current matching i e2 = ? 0.5 ma; v ce1 =5v t amb 25 c 0.7 - 1.3 t amb 150 c 0.7 - 1.3 i e2 emitter current 2 v ce1 =5v [3] -- ? 5ma table 7. characteristics ?continued t j =25 c unless otherwise specified. symbol parameter conditions min typ max unit
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 5 of 13 nxp semiconductors bcv61 npn general-purpose double transistors v ce =5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = ? 55 c v ce =5v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 150 c fig 1. bcv61a: dc current gain as a function of collector current; typical values fig 2. bcv61a: base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 150 c (2) t amb =25 c (3) t amb = ? 55 c i c /i b =10 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 150 c fig 3. bcv61a: collector-emitter saturation voltage as a function of collector current; typical values fig 4. bcv61a: base-emitter saturation voltage as a function of collector current; typical values mgt723 10 ? 1 11010 2 10 3 i c (ma) 0 400 300 200 100 h fe (1) (2) (3) mgt724 10 ? 1 11010 2 10 3 i c (ma) 0 1200 1000 800 600 400 200 v be (mv) (1) (2) (3) 10 3 10 2 10 mgt725 10 ? 1 11010 2 10 3 i c (ma) v cesat (mv) (1) (2) (3) mgt726 10 ? 1 11010 2 10 3 i c (ma) 0 1200 1000 800 600 400 200 v besat (mv) (1) (2) (3)
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 6 of 13 nxp semiconductors bcv61 npn general-purpose double transistors v ce =5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = ? 55 c v ce =5v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 150 c fig 5. bcv61b: dc current gain as a function of collector current; typical values fig 6. bcv61b: base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 150 c (2) t amb =25 c (3) t amb = ? 55 c i c /i b =10 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 150 c fig 7. bcv61b: collector-emitter saturation voltage as a function of collector current; typical values fig 8. bcv61b: base-emitter saturation voltage as a function of collector current; typical values mgt727 10 ? 1 11010 2 10 3 i c (ma) 0 600 500 400 300 200 100 h fe (1) (2) (3) 0 1200 1000 800 600 400 200 mgt728 10 ? 2 10 ? 1 11010 2 10 3 i c (ma) v be (mv) (1) (2) (3) 10 4 10 3 10 2 10 mgt729 10 ? 1 11010 2 10 3 i c (ma) v cesat (mv) (1) (2) (3) mgt730 10 ? 1 11010 2 10 3 i c (ma) 0 1200 1000 800 600 400 200 v besat (mv) (1) (2) (3)
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 7 of 13 nxp semiconductors bcv61 npn general-purpose double transistors v ce =5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = ? 55 c v ce =5v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 150 c fig 9. BCV61C: dc current gain as a function of collector current; typical values fig 10. BCV61C: base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 150 c (2) t amb =25 c (3) t amb = ? 55 c i c /i b =10 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 150 c fig 11. BCV61C: collector-emitter saturation voltage as a function of collector current; typical values fig 12. BCV61C: base-emitter saturation voltage as a function of collector current; typical values mgt731 10 ? 1 11010 2 10 3 i c (ma) 0 1200 1000 800 600 400 200 h fe (1) (2) (3) 0 1200 1000 800 600 400 200 mgt732 10 ? 2 10 ? 1 11010 2 10 3 i c (ma) v be (mv) (1) (2) (3) 10 4 10 3 10 2 10 mgt733 10 ? 1 11010 2 10 3 i c (ma) v cesat (mv) (1) (2) (3) mgt734 10 ? 1 11010 2 10 3 i c (ma) 0 1200 1000 800 600 400 200 v besat (mv) (1) (2) (3)
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 8 of 13 nxp semiconductors bcv61 npn general-purpose double transistors 8. test information i c1 /i e2 =1.3 fig 13. maximum collector-emitter voltage as a function of emitter resistance mbk082 0 30 10 20 10 ? 1 1 v ce1max (v) 10 r e ( ) 10 2 i e2 = 1 ma 5 ma 10 ma 50 ma fig 14. test circui t current matching fig 15. bcv61 with emitter resistors 006aaa83 1 a v ce1 i c1 tr2 tr1 i e2 = constant 1 2 4 3 006aab9 77 a v ce1 i c1 tr2 tr1 i e2 = constan t 1 2 4 3 r e r e
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 9 of 13 nxp semiconductors bcv61 npn general-purpose double transistors 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . fig 16. package outline sot143b 04-11-16 dimensions in mm 3.0 2.8 1.1 0.9 2.5 2.1 1.4 1.2 1.7 1.9 0.48 0.38 0.15 0.09 0.45 0.15 0.88 0.78 2 1 3 4 table 8. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 bcv61 sot143b 4 mm pitch, 8 mm tape and reel -215 -235 bcv61a bcv61b BCV61C
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 10 of 13 nxp semiconductors bcv61 npn general-purpose double transistors 11. soldering fig 17. reflow soldering footprint sot143b fig 18. wave soldering footprint sot143b solder lands solder resist occupied area solder paste sot143b_ fr 0.9 0.6 0.7 3.25 3 0.6 (3 ) 0.6 (3 ) 0.5 (3 ) 0.7 (3 ) 1 1.9 2 0.75 0.95 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot143b_ fw 4.6 4.45 1.2 (3 ) 1.425 (3 ) 1.425 1 1.2 2.2 2.575 dimensions in mm
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 11 of 13 nxp semiconductors bcv61 npn general-purpose double transistors 12. revision history table 9. revision history document id release date data sheet status change notice supersedes bcv61_4 20091218 product data sheet - bcv61_3 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? section 3 ? ordering information ? : added ? section 4 ? marking ? : updated ? figure 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 and 12 : added ? section 8 ? test information ? : added ? figure 16 : superseded by minimized package outline drawing ? section 10 ? packing information ? : added ? section 11 ? soldering ? : added ? section 13 ? legal information ? : updated bcv61_3 19990408 product s pecification - bcv61_cnv_2 bcv61_cnv_2 19970616 produ ct specification - -
bcv61_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 ? 18 december 2009 12 of 13 nxp semiconductors bcv61 npn general-purpose double transistors 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
nxp semiconductors bcv61 npn general-purpose double transistors ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 18 december 2009 document identifier: bcv61_4 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 packing information . . . . . . . . . . . . . . . . . . . . . 9 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 contact information. . . . . . . . . . . . . . . . . . . . . 12 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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